Winwon Chips Winwon Chips
Home > Diodes & Rectifiers > 30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
1 / 5
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1
30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1

30V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Trench DC/DC Converter WAYON-WMS14P03T1

Customization: Available
Encapsulation Structure: SOP-8L
Application: POWER MANAGEMENT SWITCHES
Send Inquiry

Product Description

📋 BASIC SPECIFICATIONS
Model Number WAYON-WMS14P03T1
Certification RoHS, CE, ISO, CCC
Material Silicon
Structure Planar Enhancement Mode
Switching Loss Extremely Low
Production Capacity 10,000 Pieces/Day
⚡ PRODUCT DESCRIPTION

30V P-Channel Enhancement Mode Power MOSFET

The WMS14P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features:

  • VDS = -30V, ID = -14A
  • RDS(on) < 9.2mΩ @ VGS = -10V
  • RDS(on) < 14mΩ @ VGS = -4.5V
  • High Power and Current Handling Capability
  • Low Gate Charge
  • Excellent Stability and Uniformity
  • 100% Avalanche Tested
  • Built-in ESD Diode
Technical Parameter Specification Details
DescriptionP-Channel Trench MOSFET
PackageSOP-8L
VDS(V)-30
RDS(on) (Ω)@VGS=10V(max.)0.0092
ID (A)@TA=25ºC-14
PD (W)@TA=25ºC1.5
Qg (nC)30
VGS (V)±20
Product StatusMP
🖼️ PRODUCT GALLERY
Power MOSFET 1
Power MOSFET 2
Power MOSFET 3
Power MOSFET 4
📈 TECHNICAL DATA SHEETS
Data Sheet 1 Data Sheet 2 Data Sheet 3 Data Sheet 4 Data Sheet 5
🏢 CAPABILITIES & SERVICES

Our team provides professional semiconductor discrete device sales and technical services. Our core product lines include:

  • Rectification; Ultra-fast recovery; Schottky; Zener diode; Bridge rectifier
  • Low voltage MOS; super junction MOS
  • SIC diode; SIC MOSFET

Our solutions cover switched mode power supplies (SMPS), computing, motor control, consumer electronics, mobile devices, and automotive applications.

Factory Overview
Production Line
❓ FREQUENTLY ASKED QUESTIONS
What services do you provide?
We provide turnkey solutions including RD, PCB fabrication, SMT, testing, and other value-added services.
What are your main application industries?
Our services mainly cater to industries including Medical, Automotive, Energy, Metering/Measurements, and Consumer Electronics.
Can we inspect quality during production?
Yes, we are transparent with our production process. Customers are welcome to inspect our processes and check quality in-house.
How do you protect customer design information?
We are willing to sign NDAs governed by local laws to ensure all customer data is kept at a high confidential level.
What is the standard delivery term?
We offer various delivery terms including EXW, FCA, FOB, and DDU based on the specific requirements of each quote.
Do you have a minimum order quantity (MOQ)?
No, we do not have a strict MOQ requirement. We support projects starting from initial prototypes to full mass production.

Related Products

SMA, Schottky Rectifier Diode Ss32

SMA, Schottky Rectifier Diode Ss32
MUR20040 Ultra Fast Recovery Diode 400V 200A

MUR20040 Ultra Fast Recovery Diode 400V 200A
Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=110A fetures applications MT110CB12T1

Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=110A fetures applications MT110CB12T1
Us1m Surface Mount Ultrafast Recovery Rectifier Diode SMA Do214AC

Us1m Surface Mount Ultrafast Recovery Rectifier Diode SMA Do214AC
High-Performance Bzt52c2V0s &amp; Bzt52c75s Small Signal Zener Diodes

High-Performance Bzt52c2V0s &amp; Bzt52c75s Small Signal Zener Diodes
Glass Passivated Bridge Rectifiers Fetures Applications Diode Manufacture Reverse Voltage - 50 to 1000 Volts HY-4GB1010

Glass Passivated Bridge Rectifiers Fetures Applications Diode Manufacture Reverse Voltage - 50 to 1000 Volts HY-4GB1010
MMBT5551 SOT-23 NPN TRANSISTOR Semiconductor Diode MMBT3904 MMBT3906

MMBT5551 SOT-23 NPN TRANSISTOR Semiconductor Diode MMBT3904 MMBT3906
Silicon Carbide Schottky Diode Fetures Applications &nbsp;Mosfet Unipolar rectifier VRRM=650V, IF (TC = 153.5°C)=10A Globalpowertech-G3S06510A

Silicon Carbide Schottky Diode Fetures Applications &nbsp;Mosfet Unipolar rectifier VRRM=650V, IF (TC = 153.5°C)=10A Globalpowertech-G3S06510A
309UR160 309u160 Rotating Diode 300A 1600V for Excitation Generator

309UR160 309u160 Rotating Diode 300A 1600V for Excitation Generator
100V Dual N-Channel Enhancement Mode Power MOSFET &nbsp;Fetures Applications Diode power Wayon-WMB02DN10T1

100V Dual N-Channel Enhancement Mode Power MOSFET &nbsp;Fetures Applications Diode power Wayon-WMB02DN10T1